Publications

Publication List

The Full Publications List is available in PDF.

Selected Reprints (out of >88 publications)

Contact Prof. Wistey if you would like reprints of any of our papers or talks not listed below.

  • Tuhin Dey, Md. Shamim Reza, Augustus Arbogast, Mark W. Holtz, Ravi Droopad, Seth R. Bank, Mark A. Wistey, “Molecular Beam Epitaxy of Highly Crystalline GeSnC Using CBr4 at Low Temperatures,” Appl. Phys. Lett., vol. 121, no. 12 (2022); doi:10.1063/1.5112057. [PDF reprint]
  • Istvan A. Gulyas, Chad A. Stephenson, Qian Meng, Seth R. Bank, and Mark A. Wistey, “The Carbon State in Dilute Germanium Carbides,” J. Appl. Phys. , vol. 129, p. 055701 (2021). doi:10.1063/1.5112057. [PDF reprint]
  • Istvan Gulyas, Robert Kudrawiec, Mark A. Wistey, “Electronic structure of B(x)Ga(1−x)As alloys using hybrid functionals,” DOI:10.1063/1.5111992, J. Appl. Phys., vol. 126, 095703 (2019). [PDF reprint]
  • Chad A. Stephenson, William A. O’Brien, Meng Qi, Michael Penninger, William F. Schneider, and Mark A. Wistey, “Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals,” J. Electron. Materials, vol. 45, no. 4, pp 2121–2126, April 2016. DOI: 10.1007/s11664-015-4300-9, [PDF reprint]
  • Chad A. Stephenson, William A. O’Brien, M. W. Penninger, W. F. Schneider, M. Gillett-Kunnath, J. Zajicek, K. M. Yu, R. Kudrawiec, R. A. Stillwell, Mark A. Wistey, “Band structure of germanium carbides for direct bandgap silicon photonics,” J. Appl. Phys., vol. 120, 053102 (2016).  DOI: 10.1063/1.4959255, [PDF reprint]
  • Chad A. Stephenson, Miriam Gillett-Kunnath, William A. O’Brien, Robert Kudrawiec, and Mark A. Wistey, “Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys,” Crystals, vol. 6, no. 12, p. 159 (2016). doi:10.3390/cryst6120159. [PDF reprint]
  • Mark A. Wistey, Ashish K. Baraskar, Uttam Singisetti, Greg J. Burek, Byungha Shin, Eunji Kim, Paul C. McIntyre, Arthur C. Gossard and Mark J. W. Rodwell, “Control of InGaAs and InAs facets using metal modulation epitaxy,” J. Vacuum Science and Technology B, vol. 33, no. 1, p. 011208 (2015). [PDF Reprint]
  • Meng Qi (齐蒙), Chad A. Stephenson, Vladimir Protasenko, William A. O’Brien, Alexander Mintairov, Huili (Grace) Xing and Mark A. Wistey “Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects” Appl. Phys. Lett.,vol. 104, p. 073113 (2014). [PDF Reprint and Supplemental Figure]
  • Mark Wistey, Greg Burek, Uttam Singisetti, Austin Nelson, Brian Thibeault, Joël Cagnon, Susanne Stemmer, Arthur Gossard, Seth Bank, and Mark Rodwell, “Planarization and Regrowth of Self-Aligned Ohmic Contacts on InGaAs” Conference: 15th International Conference on Molecular Beam Epitaxy (MBE 2008), [PPT Slides]
  • M.A. Wistey, Y.-Y. Fang, J. Tolle, A.V. Chizmeshya, and J. Kouvetakis, “Chemical routes to Ge/Si(100) structures for low temperature Si-based semiconductor applications.” Applied Physics Letters, v. 90, pp. 082108 (2007). [PDF reprint]
  • M.A. Wistey, S.R. Bank, H.P. Bae, H.B. Yuen, E.R. Pickett, L.L. Goddard and J.S. Harris, “GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534nm,” Electronics Letters, 2 March 2006, vol. 42, no. 5, pp. 282-283. [PDF reprint]
  • M.A. Wistey, S.R. Bank, H.B. Yuen, J.S. Harris, M.M. Oye, and A.L. Holmes, Jr., “Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy,” J. Vac. Sci. Technol. A, May/Jun 2005, vol. 23, no. 3. [PDF e-print]
  • M.A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, and J.S. Harris, “Monolithic, GaInNAsSb VCSELs at 1460nm on GaAs by MBE,” Electronics Letters, 11 Dec. 2003, vol. 39, no. 25, pp. 1822-1823. [PDF reprint]
  • S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, and J.S. Harris, “Low-threshold CW GaInNAsSb/GaAs Laser at 1.49 μm,” Electronics Letters, 2 Oct. 2003, vol. 39, no. 20, pp1445-6. [PDF reprint]

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